Nitrogen content of oxynitride films on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111948
Reference12 articles.
1. Composition and growth kinetics of ultrathin SiO2films formed by oxidizing Si substrates in N2O
2. A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O
3. High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2in N2O
4. Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process
5. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
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