Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Condensed Matter Physics
Reference28 articles.
1. G.D. Wilk, R.M. Wallace, and J.M. Anthony, High-k Gate Dielectrics: Current Status and Materials Properties Considerations, J. Appl. Phys., Vol 89, 2001, p 5243–5275
2. J.R. Pfiester, L.C. Parrillo, and F.K. Baker, A Physical Model for Boron Penetration Through Thin Gate Oxides from p+ Polysilicon Gates, IEEE Electron Device Lett., Vol 11, 1990, p 247–249
3. Z.J. Ma, J.C. Chen, Z.H. Liu, J.T. Krick, Y.T. Cheng, C. Hu, and P.K. Ko, Suppression of Boron Penetration in p+ Polysilicon Gate p-MOSFET’s Using Low-Temperature Gate-Oxide N2O Anneal, IEEE Electron Device Lett., Vol 15, 1994, p 109–111
4. Y. Morisaki, T. Aoyama, Y. Sugita, K. Irino, T. Sugii, and T. Nakamura, Ultra-Thin Poly-Si-Gate SiN/HfO2/SiON High-k Stack Dielectrics with High Thermal Stability, IEDM Tech. Dig., Int. Electron Devices Meeting Dec 8–11, 2002 (San Francisco, CA), p 861–864
5. M. Uematsu, H. Kageshima, and K. Shiraishi, Two-Dimensional Simulation of Pattern-Dependent Oxidation of Silicon Nanostructures on Silicon-on-Insulator Substrates, Solid State Electron., Vol 48, 2004, p 1073–1078
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献