High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2in N2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105622
Reference8 articles.
1. Rapid Thermal Annealed Low Pressure Chemical‐Vapor‐Deposited SiO2 as Gate Dielectric in Silicon MOSFET's
2. Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide
3. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
4. Comparison between CVD and thermal oxide dielectric integrity
5. Time-dependent-dielectric breakdown of thin thermally grown SiO2films
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1. Ultrathin tunnel insulator films on silicon for electrochemiluminescence studies;Thin Solid Films;2009-08
2. Electrical properties of ultrathin oxide grown by high pressure oxidation and N2O nitridation for ULSI device applications;International Journal of Electronics;2001-04
3. Rate-limiting steps during nitrogen incorporation in furnace-grown silicon oxynitrides: effects on wafer-to-wafer uniformity;Thin Solid Films;2000-05
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