Gate oxide integrity of thermal oxide grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/17834/00823573.pdf?arnumber=823573
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6;Solid-State Electronics;2016-10
2. Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures;ECS Transactions;2013-05-03
3. Optical Characterization of Ge-on-Si Grown by using RTCVD;ECS Transactions;2013-03-15
4. Thermal gate SiO2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate;Applied Physics Letters;2007-08-27
5. High-k gate oxide for silicon heterostructure MOSFET devices;Journal of Materials Science: Materials in Electronics;2006-09
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