Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization-Reference-Cited by-同舟云学术

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Published:2021-11-22 Issue:21 Volume:119 Page:212102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Xiaolong¹²,Liang Lingyan¹^ORCID,Zhang Hengbo¹,Wu Haijuan¹,Li Wanfa¹,Ning Ce³,Yuan Guangcai³,Cao Hongtao¹²

Affiliation:

1. Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. BOE Technology Group Co., Ltd., Beijing, China

Funder

Bureau of International Cooperation, Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0072077

Reference24 articles.

1. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack

2. Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

3. Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon

4. A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer

5. Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices

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