A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4979868
Reference31 articles.
1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
3. A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators
4. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
5. Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
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