Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon-Reference-Cited by-同舟云学术

Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon

Published:2019-09-16 Issue:12 Volume:115 Page:122104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kojima K. M.¹²,Hiraishi M.¹,Okabe H.¹,Koda A.¹²,Kadono R.¹²,Ide K.³^ORCID,Matsuishi S.⁴,Kumomi H.⁴,Kamiya T.³⁴,Hosono H.³⁴

Affiliation:

1. Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan

2. Department of Materials Structure Science, The Graduate University for Advanced Studies (Sokendai), Tsukuba, Ibaraki 305-0801, Japan

3. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan

4. Materials Research Center for Element Strategy, Tokyo Institute of Technology (MCES), Yokohama, Kanagawa 226-8503, Japan

Funder

MEXT Elements Strategy Initiative to Form Core Research Center at Tokyo Institute of Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5117771

Reference34 articles.

1. Novel oxide amorphous semiconductors: transparent conducting amorphous oxides

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. Properties and doping limits of amorphous oxide semiconductors

5. Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

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