Hydrogen in Si(100)–SiO2–HfO2 gate stacks: Relevant charge states and their location
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2828027
Reference30 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
3. Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
4. Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks
5. Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics
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