Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.9657/fulltext
Reference36 articles.
1. Dipolar interactions between dangling bonds at the (111) Si-SiO2interface
2. Si→SiO2transformation: Interfacial structure and mechanism
3. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
4. Electron Paramagnetic Resonance Studies of Interface Defects in Oxidized Silicon
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