Defects in Oxides in Electronic Devices
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-50257-1_79-1
Reference63 articles.
1. Afanas’ev VV, Stesmans A (1998) Hydrogen-induced valence alternation state at SiO2 interfaces. Phys Rev Lett 80:5176–5179
2. Alay JL, Hirose M (1997) The valence band alignment at ultrathin SiO2/Si interfaces. J Appl Phys 81:1606
3. Bachlechner ME, Omeltchenko A, Nakano A, Kalia RK, Vashishta P (1998) Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels. Appl Phys Lett 72:1969–1971
4. Blöchl PE (2000) First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen. Phys Rev B 62:6158–6179
5. Chen Y, Kolopus JL, Sibley WA (1969) Luminescence of the F+ center in MgO. Phys Rev 186:865
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