Dissolution kinetics of boron-interstitial clusters in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1594264
Reference18 articles.
1. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
2. Diffusion of boron in silicon during post‐implantation annealing
3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
4. B cluster formation and dissolution in Si: A scenario based on atomistic modeling
5. Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing
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