Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon-Reference-Cited by-同舟云学术

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Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

Published:2017-05-14 Issue:18 Volume:121 Page:185702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Niewelt T.¹²^ORCID,Selinger M.¹²,Grant N. E.³,Kwapil W.¹²^ORCID,Murphy J. D.³^ORCID,Schubert M. C.¹

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany

2. Freiburg Materials Research Center FMF, Stefan-Meier-Straße 21, 79104 Freiburg, Germany

3. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983024

Reference22 articles.

1. Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

2. Grown-in defects limiting the bulk lifetime ofp-type float-zone silicon wafers

3. A 3-state defect model for light-induced degradation in boron-doped float-zone silicon

4. Excellent silicon surface passivation with 5 Å thin ALD Al2 O3 layers: Influence of different thermal post-deposition treatments

5. Impact of the firing temperature profile on light induced degradation of multicrystalline silicon

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