A 3-state defect model for light-induced degradation in boron-doped float-zone silicon-Reference-Cited by-同舟云学术

A 3-state defect model for light-induced degradation in boron-doped float-zone silicon

Published:2017-01-10 Issue:3 Volume:11 Page:1600408
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Sperber David¹,Herguth Axel¹,Hahn Giso¹

Affiliation:

1. Department of Physics; University of Konstanz; Universitätsstr. 10 78464 Konstanz Germany

Funder

German Federal Ministry for Economic Affairs and Energy

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Review of light-induced degradation in crystalline silicon solar cells

2. K. Ramspeck S. Zimmermann H. Nagel A. Metz Y. Gassenbauer B. Birkmann A. Seidl in: Proc. 27th Eur. Photovoltaic Sol. Energy Conf. Exhib., Frankfurt/Main, Germany, 2012, pp. 861-865

3. Light-induced degradation of PECVD aluminium oxide passivated silicon solar cells

4. Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature

5. Electronically activated boron-oxygen-related recombination centers in crystalline silicon

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