Excellent silicon surface passivation with 5 Å thin ALD Al2 O3 layers: Influence of different thermal post-deposition treatments-Reference-Cited by-同舟云学术

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Excellent silicon surface passivation with 5 Å thin ALD Al2 O3 layers: Influence of different thermal post-deposition treatments

Published:2011-05-11 Issue:5-6 Volume:5 Page:202-204
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Richter Armin,Benick Jan,Hermle Martin,Glunz Stefan W.

Funder

German Federal Ministry of the Environment, Nature Conservation and Nuclear Safety

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201105188/fullpdf

Reference19 articles.

1. Silicon surface passivation by atomic layer deposited Al2O3

2. J. Benick Proc. 35th IEEE PVSC, 2010, p. 891.

3. Low‐Temperature Surface Passivation of Silicon for Solar Cells

4. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

5. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

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