Silicon surface passivation by atomic layer deposited Al2O3
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2963707
Reference57 articles.
1. Very low bulk and surface recombination in oxidized silicon wafers
2. Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress
3. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
4. 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates
5. Proceedings of the 19th EU-PVSEC;Mulligan P. M.,2004
Cited by 384 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Designing and simulating of new highly efficient ultra-thin CIGS solar cell device structure: Plan to minimize cost per watt price;Journal of Physics and Chemistry of Solids;2024-10
2. Investigation of electrical properties at ambient and high temperature of Al 2 O 3 based Schottky barrier diodes structure using I-V, C-V and G/ω-V measurements;2024-09-06
3. Optimization of passivation layer on the front surface of N-type tunnel oxide passivated contact solar cells;Thin Solid Films;2024-09
4. Electrical Performance, Loss Analysis, and Efficiency Potential of Industrial‐Type PERC, TOPCon, and SHJ Solar Cells: A Comparative Study;Progress in Photovoltaics: Research and Applications;2024-08-21
5. From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices;Advanced Energy Materials;2024-05-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3