Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101091
Reference8 articles.
1. Effect of cooling ambient on electrical activation of dopants in MOVPE of InP
2. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy
3. Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy
4. A novel MOVPE reactor with a rotating substrate
5. Hydrogen passivation of shallow-acceptor impurities inp-type GaAs
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1. High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication;Applied Physics Letters;2004-05-03
2. Application of the point-defect analysis technique to zinc doping of MOCVD indium phosphide;Semiconductor Science and Technology;2003-07-01
3. Hydrogen in wide bandgap semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
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5. GaN: Processing, defects, and devices;Journal of Applied Physics;1999-07
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