Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy

Author:

Glade M.,Grützmacher D.,Meyer R.,Woelk E. G.,Balk P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication;Applied Physics Letters;2004-05-03

2. Application of the point-defect analysis technique to zinc doping of MOCVD indium phosphide;Semiconductor Science and Technology;2003-07-01

3. Hydrogen in wide bandgap semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

4. Hydrogen in Wide Bandgap Semiconductors;Processing of Wide Band Gap Semiconductors;2000

5. GaN: Processing, defects, and devices;Journal of Applied Physics;1999-07

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