High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1737798
Reference23 articles.
1. Strain-Generated Internal Fields in Pseudomorphic (In, Ga)As/GaAs Quantum Well Structures on {11l} GaAs Substrates
2. Polarization control of vertical-cavity surface-emitting lasers through use of an anisotropic gain distribution in [110]-oriented strained quantum-well structures
3. Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
4. Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation
5. Polarization-controlled 850-nm-wavelength vertical-cavity surface-emitting lasers grown on [311]B substrates by metal-organic chemical vapor deposition
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1. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy;Science and Technology of Advanced Materials;2012-02
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