Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99258
Reference7 articles.
1. Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy
2. Mass spectrometric investigation of gas switching in an InGaAsP MOVPE system
3. Investigation of InGaAs-InP quantum wells by optical spectroscopy
4. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
5. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
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1. Material characterisation using optical spectroscopic techniques;Journal of Materials Processing Technology;1996-01
2. Optimization of interfaces in InGaAs/InP heterostructures grown by gas source molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
3. Ultrafast carrier dynamics in strained In1?xGaxAs/InP heterostructures;Applied Physics A Solids and Surfaces;1992-12
4. Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction;Journal of Crystal Growth;1992-11
5. Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates;Journal of Crystal Growth;1992-11
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