Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Composition and lattice‐mismatch measurement of thin semiconductor layers by x‐ray diffraction
2. Extremely high electron mobilities in modulation doped Ga1−xInxAs/InP heterostructures grown by LP-MOVPE
3. Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy
4. Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE
5. Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wells
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1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Interface analysis on MOVPE grown InP–GaInAs–InP double heterostructures for application in infrared solar cells;Solar Energy Materials and Solar Cells;2016-04
3. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
4. InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine;Science China Mathematics;2002-05
5. The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP;Thin Solid Films;2001-07
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