Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices-Reference-Cited by-同舟云学术

Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

Published:2016-09-12 Issue:11 Volume:109 Page:112901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Katayama Kiliha¹,Shimizu Takao²,Sakata Osami³,Shiraishi Takahisa⁴,Nakamura Syogo⁴,Kiguchi Takanori⁴,Akama Akihiro⁴,Konno Toyohiko J.⁴,Uchida Hiroshi⁵^ORCID,Funakubo Hiroshi¹²⁶

Affiliation:

1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

3. Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan

4. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

5. Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan

6. School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Funder

Japan Society for the Promotion of Science London (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference17 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

3. D. Martin , E. Yurchuk , S. Muller , J. Muller , J. Paul , J. Sundquist , S. Slesazeck , T. Schloesser , R. van Bentum , M. Trentzsch , U. Schroeder , and T. Mikojajick , in 2012 13th International Conference on Ultimate Integration on Silicon (IEEE, 2012), pp. 195–198.

4. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

5. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Cited by 71 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. Progress in computational understanding of ferroelectric mechanisms in HfO2;npj Computational Materials;2024-08-23

3. Ferroelectric-controlled magnetoelectric effect at the CrI3/HfO2 interface;Physical Review B;2024-08-05

4. Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO₂ Thin Films;ACS Applied Electronic Materials;2024-07-25

5. Influence of oxygen pressure on the ferroelectricity of pulsed laser deposition fabricated epitaxial Y-doped HfO2;Journal of Applied Physics;2024-07-03