Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation-Reference-Cited by-同舟云学术

Optimizing the Ferroelectric Properties of Hf_1–xZr_xO₂ Films via Crystal Orientation

Published:2023-02-07 Issue:2 Volume:5 Page:1114-1122
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Teng Chih-Yu¹,Cheng Chia-Chieh¹,Li Kai-Shin²,Hu Chenming³⁴,Lin Jhih-Min⁵,Lin Bi-Hsuan⁵^ORCID,Tang Mau-Tsu⁵,Tseng Yuan-Chieh¹^ORCID

Affiliation:

1. Department of Materials Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

2. Taiwan Semiconductor Research Institute, Hsinchu 30010, Taiwan

3. Intelligent Semiconductor Nano-system Technology Research Center, National Yang Ming Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

4. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

5. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01582

Reference56 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Prediction of new metastable $$\hbox {HfO}_{2}$$ HfO 2 phases: toward understanding ferro- and antiferroelectric films

3. Pathways towards ferroelectricity in hafnia

4. The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

5. A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

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