AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric-Reference-Cited by-同舟云学术

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Published:2021-02-15 Issue:7 Volume:118 Page:072102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Tsung-Han¹^ORCID,Brown Jesse²,Fu Kai¹^ORCID,Zhou Jingan¹^ORCID,Hatch Kevin²,Yang Chen¹^ORCID,Montes Jossue¹,Qi Xin¹^ORCID,Fu Houqiang³^ORCID,Nemanich Robert J.²^ORCID,Zhao Yuji¹^ORCID

Affiliation:

1. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85282, USA

2. Department of Physics, Arizona State University, Tempe, Arizona 85282, USA

3. Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA

Funder

Advanced Research Projects Agency - Energy

Glenn Research Center

Arizona State University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0027885

Reference36 articles.

1. The 2018 GaN power electronics roadmap

2. Nanometre-scale electronics with III–V compound semiconductors

3. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

4. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

5. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

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