On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode-Reference-Cited by-同舟云学术

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On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

Published:2024-07 Issue: Volume:684 Page:415965
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mamor Mohammed^ORCID,Bouziane Khalid,Chakir Hind,Ruterana Pierre^ORCID

Publisher

Elsevier BV

Reference45 articles.

1. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron. Dev.,2017

2. Recent advancements in wide band semiconductors (SiC and GaN) technology for future devices;Singh;Silicon,2022

3. Characterizations of enhancement-mode double heterostructure GaN HEMTs with gate field plates;Lee;IEEE Trans. Electron. Dev.,2018

4. GaN electronics;Pearton;Adv. Mater.,2000

5. AlGaN/GaN metal–insulator semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric;Yang;Appl. Phys. Lett.,2021

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