Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3502483
Reference14 articles.
1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2. Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells
3. Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells
4. Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices
5. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
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1. Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy;Journal of Vacuum Science & Technology B;2022-09
2. Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices;physica status solidi (b);2015-09-28
3. Electrical properties of extended defects in III-nitrides;Acta Materialia;2015-05
4. Intentional anisotropic strain relaxation in ( 112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN;Applied Physics Letters;2014-09-22
5. Lattice-matched AlInN in the initial stage of growth;Applied Physics Letters;2014-04-21
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