Intentional anisotropic strain relaxation in ( 112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN-Reference-Cited by-同舟云学术

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Intentional anisotropic strain relaxation in ( 112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN

Published:2014-09-22 Issue:12 Volume:105 Page:122109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Buß E. R.¹,Rossow U.¹,Bremers H.¹²,Meisch T.³,Caliebe M.³,Scholz F.³,Hangleiter A.¹²

Affiliation:

1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig, Germany

2. Laboratory for Emerging Nanometrology, Braunschweig, Germany

3. Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4895938

Reference16 articles.

1. First‐principles calculations for zinc‐blende AlInN alloys

2. Die Konstitution der Mischkristalle und die Raumf�llung der Atome

3. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

4. Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

5. Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization anisotropy and valence band ordering in semipolar (112¯2) AlInN/GaN heterostructures;Physical Review B;2023-01-05

2. Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers;Applied Physics Letters;2019-11-11

3. Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells;Applied Physics Letters;2019-02-04

4. Strain dependence of In incorporation in m-oriented GaInN/GaN multi quantum well structures;Applied Physics Letters;2016-03-07

5. Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy;Journal of Applied Physics;2015-07-14

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