Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3120551
Reference18 articles.
1. Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells
2. Latest developments in GaN-based quantum devices for infrared optoelectronics
3. Design of unipolar intersubband lasers for terahertz emission
4. Intersubband absorption at ∼2.1 [micro sign]m in A-plane GaN∕AlN multiple quantum wells
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3. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06
4. Theoretical analysis of intersubband optical absorption in asymmetric AlInN/GaN/AlInN quantum well heterostructures;Optik;2021-12
5. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices;Journal of Applied Physics;2020-05-14
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