Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
Author:
Affiliation:
1. Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
2. ACCEL, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Funder
Japan Society for the Promotion of Science
Accelerated Innovation Research Initiative Turning Top Science and Ideas into High-Impact Values
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5103185
Reference19 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy
4. Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
5. Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique
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