Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864283
Reference9 articles.
1. Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
2. Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction
3. Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
4. GaN light-emitting diodes on glass substrates with enhanced electroluminescence
5. Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
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