On the interface state density at In0.53Ga0.47As/oxide interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3267104
Reference16 articles.
1. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
2. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
3. In[sub 0.53]Ga[sub 0.47]As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and LaAlO[sub 3] gate dielectrics
4. Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
5. 1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm
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