Electrically active defects in Al<sub>2</sub>O<sub>3</sub>-InGaAs MOS stacks at cryogenic temperatures-Reference-Cited by-同舟云学术

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Electrically active defects in Al₂O₃-InGaAs MOS stacks at cryogenic temperatures

Published:2023-10-08 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

La Torraca Paolo¹,Padovani Andrea²,Wernersson Lars-Erik³,Cherkaoui Karim⁴,Hurley Paul⁴,Larcher Luca⁵

Affiliation:

1. University of Modena and Reggio Emilia,Department of Sciences and Methods for Engineering,Reggio Emilia,Italy

2. University of Modena and Reggio Emilia,Department of Engineering "Enzo Ferrari",Modena,Italy

3. Lund University,Department of Electrical and Information Technology,Lund,Sweden

4. University College Cork,Tyndall National Institute,Cork,Ireland

5. Applied Materials,MDLx Italy,Reggio Emilia,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10477668/10477631/10477706.pdf?arnumber=10477706

Reference27 articles.

1. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

2. A Wideband Low-Power Cryogenic CMOS Circulator for Quantum Applications

3. Cryogenic CMOS: design considerations for future quantum computing systems

4. Electronic components and circuits for extreme temperature environments

5. CESAR: Cryogenic Electronics for Space Applications

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