A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures-Reference-Cited by-同舟云学术

A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Published:2022-11-07 Issue:17 Volume:132 Page:175302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nishiguchi K.¹^ORCID,Nakata K.¹,Hashizume T.²

Affiliation:

1. Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., Yokohama 244-8588, Japan

2. Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

Abstract

The capacitance–voltage ([Formula: see text]–[Formula: see text]) and conductance–voltage ([Formula: see text]–[Formula: see text]) characteristics of GaN metal–insulator–semiconductor (MIS) structures have a frequency dependence due to the capture and emission of electrons by the high density of the interface states. However, the details of how an interface state affects [Formula: see text]–[Formula: see text] and [Formula: see text]–[Formula: see text] characteristics is still not well understood. In this paper, we report a numerical modeling method that can simulate the frequency dependent [Formula: see text]–[Formula: see text] and [Formula: see text]–[Formula: see text] characteristics of GaN MIS structures.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0112198

Reference32 articles.

1. Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

2. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

3. Recent progress of GaN power devices for automotive applications

4. Recent development of vertical GaN power devices

5. Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

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