Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801928
Reference7 articles.
1. Ni- and Co-based silicides for advanced CMOS applications
2. Controlling nickel silicide phase formation by Si implantation damage
3. Advanced in situ pre-Ni silicide (Siconi) cleaning at 65nm to resolve defects in NiSix modules
4. Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films
5. The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation
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1. A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films;Microelectronic Engineering;2024-08
2. Nanoscale effect on the formation of the amorphous Ni silicide by rapid thermal annealing from crystalline and pre-amorphized silicon;Acta Materialia;2024-01
3. Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide;Microelectronic Engineering;2022-02
4. Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms;Microelectronic Engineering;2021-05
5. Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation;Journal of Applied Physics;2021-03-21
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