Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms-Reference-Cited by-同舟云学术

Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms

Published:2021-05 Issue: Volume:244-246 Page:111571
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Guillemin S.,Gergaud P.,Bernier N.,Lachal L.,Mazen F.,Jannaud A.,Nemouchi F.,Rodriguez Ph.

Funder

ANR

ECSEL

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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3. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition;Mangelinck;Appl. Phys. Lett.,1999

4. Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films;Lavoie;Microelectron. Eng.,2006

5. On the growth kinetics of Ni(Pt) silicide thin films;Demeulemeester;J. Appl. Phys.,2013

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1. A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films;Microelectronic Engineering;2024-08

2. Nanoscale effect on the formation of the amorphous Ni silicide by rapid thermal annealing from crystalline and pre-amorphized silicon;Acta Materialia;2024-01

3. Evolution of the Ni0.9Pt0.1/Si system under annealing via nano-crystalline textured phases;Journal of Applied Physics;2023-07-19