Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation
Author:
Affiliation:
1. Université Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
2. Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
Funder
Agence Nationale de la Recherche
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0038253
Reference54 articles.
1. Si–Ge–Sn alloys: From growth to applications
2. Growth and applications of GeSn-related group-IV semiconductor materials
3. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs
4. Lasing in direct-bandgap GeSn alloy grown on Si
5. Sn diffusion during Ni germanide growth on Ge1–xSnx
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films;Microelectronic Engineering;2024-08
2. Advances in GeSn alloys for MIR applications;Photonics and Nanostructures - Fundamentals and Applications;2024-02
3. Innovative Annealing Technology for Thermally Stable Ni(GeSn) Alloys;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08
4. Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys;IEEE Journal of the Electron Devices Society;2023
5. Ni-based metallization of GeSn layers: A review and recent advances;Microelectronic Engineering;2023-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3