Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes-Reference-Cited by-同舟云学术

Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

Published:2015-05-28 Issue:20 Volume:117 Page:204501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

He Kai¹²,Zhou Song-Min¹,Li Yang³,Wang Xi¹²,Zhang Peng¹²,Chen Yi-Yu¹²,Xie Xiao-Hui¹,Lin Chun¹,Ye Zhen-Hua¹,Wang Jian-Xin¹,Zhang Qin-Yao¹

Affiliation:

1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

The Innovation Project of The Shanghai Institute of Technical Physics

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921593

Reference29 articles.

1. Third-generation infrared photodetector arrays

2. Effect of dislocations on the zero-bias resistance-area product, quantum efficiency, and spectral response of lwir hgcdte photovoltaic detectors

3. The development of HgCdTe infrared detector technology in China

4. Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors

5. HgCdTe: Recent Trends in the Ultimate IR Semiconductor

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