Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures-Reference-Cited by-同舟云学术

Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures

Published:2020-10-01 Issue:10 Volume:10 Page:105102
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Xi¹,He Kai²^ORCID,Chen Xing¹,Li Yang³,Lin Chun¹,Zhang Qinyao¹,Ye Zhenhua¹,Xin Liwei²,Gao Guilong²,Yan Xin²,Wang Gang²⁴,Liu Yiheng²⁴,Wang Tao²,Tian Jinshou²

Affiliation:

1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

2. Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi’an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi’an, Shaanxi 710119, China

3. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan

4. University of Chinese Academy of Sciences, Beijing 100049, China

Funder

the Key Laboratory Infrared Imaging Materials and Devices of Chinese Academy of Sciences

the Natural Science Basic Research Plan in Shaanxi Province of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021073

Reference13 articles.