Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab9726/pdf
Reference33 articles.
1. HgCdTe infrared detector material: history, status and outlook
2. Third-generation infrared photodetector arrays
3. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
4. HgCdTe: Recent Trends in the Ultimate IR Semiconductor
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2. Comparative study on dark current mechanisms of n-on-p and p-on-n long-wavelength HgCdTe infrared detectors;Infrared Physics & Technology;2022-06
3. Analysis of temperature dependent dark current mechanisms for long-wavelength infrared p-on-n HgCdTe detectors;Semiconductor Science and Technology;2021-04-20
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