The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface-Reference-Cited by-同舟云学术

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The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

Published:2020-08 Issue:8 Volume:46 Page:741-744
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Gorshkov D. V.,Sidorov G. Yu.,Sabinina I. V.,Sidorov Yu. G.,Marin D. V.,Yakushev M. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1134/S1063785020080064.pdf

Reference15 articles.

1. A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, S. N. Danilov, S. A. Dvoretskiy, N. N. Mikhailov, L. I. Ryabova, and D. R. Khokhlov, Beilstein J. Nanotechnol 9 (1), 1035 (2018). https://doi.org/10.3762/bjnano.9.96

2. V. Y. Aleshkin, A. A. Dubinov, V. V. Rumyantsev, M. A. Fadeev, O. L. Domnina, N. N. Mikhailov, S. A. Dvoretsky, F. Teppe, V. I. Gavrilenko, and S. V. Morozov, J. Phys.: Condens. Matter 30, 495301 (2018). https://doi.org/10.1088/1361-648X/aaebf5

3. V. M. Bazovkin, V. S. Varavin, V. V. Vasil’ev, A. V. Glukhov, D. V. Gorshkov, S. A. Dvoretsky, A. P. Kovchavtsev, Y. S. Makarov, D. V. Marin, I. V. Mzhelsky, V. G. Polovinkin, V. G. Remesnik, I. V. Sabinina, Y. G. Sidorov, G. Y. Sidorov, et al., J. Commun. Technol. Electron. 64, 1011 (2019). https://doi.org/10.1134/S1064226919090043

4. P. Zhang, Z.-H. Ye, C.-H. Sun, Y.-Y. Chen, T.-N. Zhang, X. Chen, C. Lin, R.-J. Ding, and L. He, J. Electron. Mater. 45, 4716 (2016). https://doi.org/10.1007/s11664-016-4686-z

5. A. P. Kovchavtsev, G. Y. Sidorov, A. E. Nastovjak, A. V. Tsarenko, I. V. Sabinina, and V. V. Vasilyev, J. Appl. Phys. 121, 125304 (2017). https://doi.org/10.1063/1.4978967

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1. Application of Al2O3 Film for Stabilization of the Charge Properties of the SiO2/p-Si Interface;Russian Microelectronics;2023-12

2. Native Oxide of HgCdTe as a Passivation Layer;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

3. Application of Al2O3 film for stabilization of charge properties of the SiO2/p-Si interface;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2023-04-10

4. HgCdTe Device Technology;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

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