Native Oxide of HgCdTe as a Passivation Layer
Author:
Affiliation:
1. Rzhanov Institute of Semiconductor Physics SB RAS,Novosibirsk,Russia
Funder
Russian Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225210.pdf?arnumber=10225210
Reference15 articles.
1. Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4
2. Reduction of native oxides on GaAs during atomic layer growth of Al2O3
3. Specific Features of the Bending Zones on the Surface of Varizon Hg1-xCdxTe [Osobennosti isgiba zon na povercknosti varizonnogo Hg1-xCdxTe];predeyin;Applied Physics [Prikladnaya fisika],2011
4. Dynamics of Growth of the Native Oxide of CdxHg1−xTe
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