Influence of substrate‐boron concentration on the residual end‐of‐range defects in 450 °C annealed As+‐implanted junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362956
Reference15 articles.
1. Trends for Future Silicon Technology
2. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
3. Electrical Activation of Implanted Arsenic in Silicon during Low Temperature Anneal
4. Annealing properties of ion‐implanted p‐n junctions in silicon
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5. Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS devices: an effect of self-sealing barrier configuration interposed between Ta and SiO/sub 2/;IEEE Transactions on Electron Devices;2000
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