Annealing properties of ion‐implanted p‐n junctions in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663714
Reference7 articles.
1. A model for the formation of amorphous Si by ion bombardment
2. Measurements of hall-effect and sheet resistivity as a function of temperature on hot, phosphorous implants in silicon
3. ANNEALING CHARACTERISTICS OF n‐TYPE DOPANTS IN ION‐IMPLANTED SILICON
4. THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
5. THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION
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5. Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation;MRS Proceedings;2000
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