Low-Noise Si-JFETs Enhanced by Split-Channel Concept
Author:
Affiliation:
1. Fraunhofer Einrichtung für Mikrosysteme und Festkörpertechnologien, Munich, Germany
Funder
Federal Ministry of Education and Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9237191/09225714.pdf?arnumber=9225714
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1. Design of a fast and low-noise front-end electronics developed for the measurements of low- and medium-energy charged particles in space plasma environments;Review of Scientific Instruments;2023-07-01
2. Suppress Short Channel Effects on Split Channel-Cylindrical GAA TFET Using Buried Oxide Layer;Key Engineering Materials;2022-11-28
3. A New Design Methodology to Improve the Input-referred Noise of Analog Front-end Circuits;2022 20th IEEE Interregional NEWCAS Conference (NEWCAS);2022-06-19
4. C-JFET OpAmp on “Folded” Cascode with Compensation Channel for the Systematic Component of the Zero Bias Voltage;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09
5. A Novel Current Density Based Design Approach of Low-Noise Amplifiers;IEEE Access;2022
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