Low Leakage Current and Low Resistivityp+nDiodes on Si(110) Fabricated by Ga+and B+Dual Ion Implantation for Low Temperature Source–Drain Activation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference18 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric
3. Metal Gate Work Function Engineering on Gate Leakage of MOSFETs
4. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
5. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
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