Dependence of ion implantation: Induced defects on substrate doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337080
Reference12 articles.
1. Reverse‐bias current reduction in low‐temperature‐annealed siliconpnjunctions by ultraclean ion‐implantation technology
2. Eliminating Metal‐Sputter Contamination in Ion Implanter for Low‐Temperature‐Annealed, Low‐Reverse‐Bias‐Current Junctions
3. Influence of substrate‐boron concentration on the residual end‐of‐range defects in 450 °C annealed As+‐implanted junctions
4. Influence of substrate dopant concentration on electrical properties and residual defects in pn junction formed by low-temperature post-implantation annealing
5. Behavior of Defects Induced by Low-Energy Ions in Silicon Films
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