Reverse‐bias current reduction in low‐temperature‐annealed siliconpnjunctions by ultraclean ion‐implantation technology
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344529
Reference10 articles.
1. Annealing properties of ion‐implanted p‐n junctions in silicon
2. Arsenic-Implanted Emitter and Its Application to UHF Power Transistors
3. Rapid thermal annealing of BF2+implanted, preamorphized silicon
4. Optimization of the germanium preamorphization conditions for shallow-junction formation
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