Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100385
Reference13 articles.
1. Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
2. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices
3. Strained‐layer quantum‐well injection laser
4. Photoluminescence in strained InGaAs‐GaAs heterostructures
5. Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates
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3. Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE;Physica E: Low-dimensional Systems and Nanostructures;2014-02
4. Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes;IEEE Transactions on Electron Devices;2001
5. Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures;Semiconductor Science and Technology;2000-10-06
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