Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures-Reference-Cited by-同舟云学术

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Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures

Published:2000-10-06 Issue:11 Volume:15 Page:1035-1038
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kunets Vas P,Kissel H,Müller U,Walther C,Masselink W T,Mazur Yu I,Tarasov G G,Zhuchenko Z Ya,Lavoric S,Valakh M Ya

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

2. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

3. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

4. Temperature-dependent relaxation and growth phenomena in strainedInxGa1−xAs layers grown on GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CHARACTERIZING LOCALIZED STRAIN OF IN0.83Al0.17As/In0.83Ga0.17As DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE;Surface Review and Letters;2016-02

2. Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures;Japanese Journal of Applied Physics;2010-08-20

3. Quantum oscillations of the luminescence from a modulation-doped GaAs∕InGaAs∕GaAlAs quantum well;Applied Physics Letters;2006-01-30

4. Generation-recombination noise in pseudomorphic Modulation-doped Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.1/Ga/sub 0.9/As/GaAs micro-Hall devices;IEEE Sensors Journal;2005-10

5. Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas;Physical Review B;2002-05-29

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