Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. Achievement of exceptionally high mobilities in modulation-doped Ga1−xInxAs on InP using a stress compensated structure
2. Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures
3. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
4. Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition
5. Very high purity In0.53Ga0.47As grown by molecular beam epitaxy
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1. Inspection of the Defect State Using the Mobility Spectrum Analysis Method;Nanomaterials;2022-08-12
2. Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure;Nanomaterials;2021-02-26
3. An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response;Current Applied Physics;2019-04
4. On the pitfalls of applying isotropic mobility spectrum analysis to conductors with weak anisotropy;Journal of Applied Physics;2018-09-28
5. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1−xGaxAs channel capping layer;AIP Advances;2015-06
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