CHARACTERIZING LOCALIZED STRAIN OF IN0.83Al0.17As/In0.83Ga0.17As DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE-Reference-Cited by-同舟云学术

CHARACTERIZING LOCALIZED STRAIN OF IN0.83Al0.17As/In0.83Ga0.17As DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE

Published:2016-02 Issue:01 Volume:23 Page:1550110
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

SU WEITAO¹²,DOU HONGLEI¹,HUO DEXUAN¹,YU GUOLIN³,DAI NING³

Affiliation:

1. Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China

2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China

3. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China

Abstract

Localized strain accumulation and related defects strongly affect the performance of optoelectronic detectors. However, characterizing distribution of the localized strain and defects still challenges usability and spatial resolution of many measurements. In current study, the defects and surface strain accumulation of In[Formula: see text]Al[Formula: see text]As/In[Formula: see text]Ga[Formula: see text]As multilayer detectors are investigated using low-frequency atomic force acoustic microscope (AFAM) and Raman spectroscopy. With AFAM, the strain accumulation and defects can be easily identified and measured with spatial resolution as good as that of atomic force microscope (AFM).

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X15501103

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