Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3685466
Reference16 articles.
1. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
3. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
4. Light-Emitting Diodes
5. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
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1. Optimization of p-GaP reflective electrode for vertical LED;Results in Physics;2021-11
2. Modulating Ohmic Contact Through InGaxNyOzInterfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes;IEEE Photonics Journal;2016-06
3. Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes;Journal of Physics D: Applied Physics;2016-05-26
4. Reduction of the resistivity of Ag/p-GaN contact by progressive breakdown of the interfacial contamination layer;Journal of Applied Physics;2015-10-28
5. Effect of nanometer sized Ni dot/Ag/Pt reflection metal of InGaN light emitting diodes on conversion efficiency of yellow phosphor;Current Applied Physics;2015-06
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