Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3685466
Reference16 articles.
1. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
3. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
4. Light-Emitting Diodes
5. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
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3. Modulating Ohmic Contact Through InGaxNyOzInterfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes;IEEE Photonics Journal;2016-06
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